Ignoring secondary breakdown can be costly. 忽视次级的详细划分的代价会很大。
Diffused resistor model under ESD stress in linear, saturation, multiplication and snapback, and secondary breakdown regions was analyzed. 对ESD应力下扩散电阻的四个区域:线性区、饱和区、雪崩倍增和负微分电阻区、二次击穿区的模型进行了分析。
Aerodist is a useful equipment for secondary breakdown, but not for primary control. The On-line Measurement of the Traveling Wave Velocity in Fault Location System; 航空微波测距仪是测定二等补充网的有效仪器,但不能用于一等控制网测量。
The main device failure mode is secondary breakdown. 器件的主要失效模式是二次击穿。
This paper studies the characteristics of the secondary discharge and the breakdown mechanism through identifying the voltage threshold where the secondary discharge will probably occur and monitoring the pulse current of the secondary discharge. 通过地面模拟实验研究,确定了二次放电阈值电压并监测了二次放电脉冲电流,对高压太阳阵二次放电特性及其击穿机理进行了讨论。
VDMOS is widely adopted in PDP driver, the damage resulted by secondary breakdown effect can` t be ignored. 在PDP驱动电路中的高压功率器件大量采用了VDMOS器件,由二次击穿引起的器件损坏不容忽视。
The effect of some parameters on secondary breakdown is simulated by using the MEDICI soft. 同时用器件仿真软件MEDICI模拟了各参数对功率晶体管VDNMOS二次击穿的影响,给出了仿真结果。
The Safe Display of Secondary Breakdown Characteristic Curve in Forward-biased Transistors 晶体三极管正偏二次击穿特性曲线的安全显示
By monitoring, analyzing and diagnosis in the continuous casting system, especially the cooling device of the secondary cooling process online, carry out the breakdown prevention of the system, and make sure the smoothly progress of the production. 通过对连铸系统、特别是对二冷区的冷却设备进行在线监控、分析与诊断,实现系统的故障预防,以保证生产的顺利进行。
When transporting, many secondary electrons can be generated from the target and the drift space under the bombardment of deuterons. The electrons entering the accelerating tube can seriously influence the load capacity and breakdown characteristics of the accelerating tube. 在束流传输过程中,束流与靶和漂移空间的相互作用会产生大量的二次电子,二次电子抑制装置用于阻止二次电子进入加速管影响加速管的负载能力和击穿特性。
The testing picture indicated that the secondary voltage has great influence on the secondary growth of electrical trees in XLPE cables. It is the main factor that accelerate cable aging and breakdown. 表明二次施压对电树枝的二次引发和生长有较大影响,能加速电缆的老化和击穿。
Power devices as a development of integrated circuits, application of increasing scope, VDMOS transistor as an important kind of power devices with high input impedance, fast, no secondary breakdown and so on. 功率器件作为集成电路的一个发展方向,其应用的范围不断扩大,VDMOS晶体管作为功率器件中重要的一种,具有高输入阻抗、速度快、没有二次击穿等优点。